STLD200N4F6AG

STLD200N4F6AG Automotive-grade N-channel 40 V, 1.27 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 DSC Datasheet - production data Figure 1: Internal schematic diagram D(5, 6, 7, 8) G(4) Features Order code STLD200N4F6AG VDS 40 V RDS(on) max. 1.50 mΩ ID 120 A  AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Wettable flank package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) Order code STLD200N4F6AG Marking 200 Table 1: Device summary Package PowerFLAT™ 5x6 dual side cooling Packaging Tape and reel July 2017 DocID028892 Rev 5 This is information on a product in full production. 1/13 www.st.com Contents Contents STLD200N4F6AG 1 Electrical ratings ..........