STM101N

Green Product STM101N Ver1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Typ 170 @ VGS=10V 260 @ VGS=4.5V S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit 100 ±20 TA=25°C TA=70°C 3 2.4 15 2.3 TA=25°C TA=70°C 2.8 1.8 -55 to 150 Units V V A A A mJ W W °C -Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 44 °C/W Details are subject to change without notice. Oct,08,2010 1 www.samhop.com.tw STM101N Ver1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Min 100 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 uA nA VDS=VGS , ID=250uA VGS=10V , ID=1.5A VGS=4.5V , ID=1A VDS=10V , ID=1.5A 1 1.8 170 260 5.5 3 210 350 V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC DYNAMIC CHARACT...