STM102D

G P STM102D Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 100V PRODUCT SUMMARY (P-Channel) V DSS -100V ID 2.0A R DS(ON) (m Ω) Max 216 @ VGS=10V ID -1.3A R DS(ON) (m Ω) Max 547 @ VGS=-10V 614 @ VGS=-4.5V 328 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TC=25°C TC=70°C N-Channel P-Channel -100 100 ±20 ±20 -1.3 2.0 1.6 7.2 16 -1.0 -4.7 25 2 1.28 -55 to 150 Units V V A A A mJ W W °C Sigle Pulse Avalanche Energy Maximum Power Dissipation a TC=25°C TC=70°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Nov,30,2011 1 www.samhop.com.tw STM102D Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Min 100 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±100 VDS=VGS , ID=250uA VGS=10V , ID=1.0A VG...