STM105N

Green Product STM105N Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 6A R DS(ON) (m Ω) Max 31 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b ae Limit 100 ±20 TA=25°C TA=70°C d Units V V A A A mJ W W °C 6 4.8 30 169 -Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2.5 1.6 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Jul,30,2013 1 www.samhop.com.tw STM105N Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=10mA VDS=80V , VGS=0V 100 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=3A VDS=10V , ID=3A 2 2.6 25 12 4 31 V m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer ...