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STM122N Datasheet

Part Number STM122N
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description Dual N-Channel MOSFET
Datasheet STM122N DatasheetSTM122N Datasheet (PDF)

Gr Pr STM122N Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3.4A R DS(ON) (m ) Max 100 @ VGS=10V 125 @ VGS=4.5V D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Volt.

  STM122N   STM122N






Dual N-Channel MOSFET

Gr Pr STM122N Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3.4A R DS(ON) (m ) Max 100 @ VGS=10V 125 @ VGS=4.5V D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TA=25°C TA=70°C 3.4 2.7 12 42 TA=25°C TA=70°C 2 1.28 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Dec,27,2011 1 www.samhop.com.tw STM122N Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=80V , VGS=0V Min 100 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS= ±20V , VDS=0V 1 ±100 uA nA ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=1.7A VGS=4.5V , ID=1.5A VDS=5V , ID=1.7A 1.0 1.7 83 93 4.3 930 63 45 3 100 125 V m.


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