Green Product
STM201N
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
ID
4A
R DS(ON) (m Ω) Typ
110 @ VGS=10V 170 @ VGS=4.5V
S O-8 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -P.
N-Channel MOSFET
Green Product
STM201N
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
ID
4A
R DS(ON) (m Ω) Typ
110 @ VGS=10V 170 @ VGS=4.5V
S O-8 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 100 ±20 TC=25°C TC=70°C 4 3.5 21 4 TC=25°C TC=70°C 3.4 2.4 -55 to 175
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
44
°C/W
Details are subject to change without notice.
Oct,08,2010
1
www.samhop.com.tw
STM201N
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=80V , VGS=0V
100
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=2A VGS=4.5V , ID=1A VDS=10V , ID=2A
1
1.8 110 170 5
3 140 245
V m ohm m ohm S
DYNAMIC CHARACTERISTICS Input Capacitance .