STM32L4P5QE Datasheet
STM32L4P5xx
Ultra-low-power Arm®Cortex®-M4 32-bit MCU+FPU, 150 DMIPS, up to 1-MB Flash memory, 320-KB SRAM, LCD-TFT, ext. SMPS
Datasheet - production data
Features
Includes ST state-of-the-art patented technology
Ultra-low-power with FlexPowerControl
• 1.71 V to 3.6 V power supply • -40 °C to 85/125 °C temperature range • Batch acquisition mode (BAM) • 150 nA in VBAT mode: supply for RTC and
32x32-bit backup registers
• 22 nA Shutdown mode (5 wakeup pins) • 42 nA Standby mode (5 wakeup pins) • 190 nA Standby mode with RTC • 2.95 μA Stop 2 with RTC • 110 μA/MHz Run mode (LDO mode) • 41 μA/MHz Run mode (@ 3.3 V SMPS mode) • 5 µs wakeup from Stop mode • Brownout reset (BOR) in all modes except
Shutdown
Core
• Arm® 32-bit Cortex®-M4 CPU with FPU, adaptive real-time accelerator (ART Accelerator) allowing 0-wait-state execution from Flash memory, frequency up to 120 MHz, MPU, 150 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
Memories
• 1-Mbyte Flash memory, 2 banks read-whilew.
STM32L4P5xx
Ultra-low-power Arm®Cortex®-M4 32-bit MCU+FPU, 150 DMIPS, up to 1-MB Flash memory, 320-KB SRAM, LCD-TFT, ext. SMPS
Datasheet - production data
Features
Includes ST state-of-the-art patented technology
Ultra-low-power with FlexPowerControl
• 1.71 V to 3.6 V power supply • -40 °C to 85/125 °C temperature range • Batch acquisition mode (BAM) • 150 nA in VBAT mode: supply for RTC and
32x32-bit backup registers
• 22 nA Shutdown mode (5 wakeup pins) • 42 nA Standby mode (5 wakeup pins) • 190 nA Standby mode with RTC • 2.95 μA Stop 2 with RTC • 110 μA/MHz Run mode (LDO mode) • 41 μA/MHz Run mode (@ 3.3 V SMPS mode) • 5 µs wakeup from Stop mode • Brownout reset (BOR) in all modes excep.
32-bit MCU
STM32L4P5xx
Ultra-low-power Arm®Cortex®-M4 32-bit MCU+FPU, 150 DMIPS, up to 1-MB Flash memory, 320-KB SRAM, LCD-TFT, ext. SMPS
Datasheet - production data
Features
Includes ST state-of-the-art patented technology
Ultra-low-power with FlexPowerControl
• 1.71 V to 3.6 V power supply • -40 °C to 85/125 °C temperature range • Batch acquisition mode (BAM) • 150 nA in VBAT mode: supply for RTC and
32x32-bit backup registers
• 22 nA Shutdown mode (5 wakeup pins) • 42 nA Standby mode (5 wakeup pins) • 190 nA Standby mode with RTC • 2.95 μA Stop 2 with RTC • 110 μA/MHz Run mode (LDO mode) • 41 μA/MHz Run mode (@ 3.3 V SMPS mode) • 5 µs wakeup from Stop mode • Brownout reset (BOR) in all modes except
Shutdown
Core
• Arm® 32-bit Cortex®-M4 CPU with FPU, adaptive real-time accelerator (ART Accelerator) allowing 0-wait-state execution from Flash memory, frequency up to 120 MHz, MPU, 150 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
Memories
• 1-Mbyte Flash memory, 2 banks read-whilewrite, proprietary code readout protection
• 320 Kbytes of SRAM including 64 Kbytes with hardware parity check
• External memory interface for static memories supporting SRAM, PSRAM, NOR, NAND and FRAM memories
LQFP48 (7 x 7 mm)
LQFP64 (10 x 10 mm) LQFP100 (14 x 14 mm) LQFP144 (20 x 20 mm)
UFQFPN48 (7 x 7 mm)
UFBGA132 (7 x 7 mm) UFBGA169 (7 x 7 mm) WLCSP100
(pitch 0.4 mm)
• 2 x Octo-SPI memory interfaces
General-purpose inputs/outputs
• Up to 136 fast I/Os, most 5 V-tolerant, up to 14 I/Os wi.
2023-03-09 : LNBTVS6 LNBH26 LDLN050 STOD03A STOD03B STM1068 L6452 STOD14 VN751S L6572