STN3NE06

www.DataSheet4U.com ® STN3NE06 N - CHANNEL 60V - 0.08Ω - 3A - SOT-223 STripFET™ POWER MOSFET TYPE ST N3NE06 s s s s s V DSS 60 V R DS(on) < 0.100 Ω ID 3 A TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™ ” stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION 1 SOT-223 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P to t dv/dt( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction T emperature o o o Value 60 60 ± 20 3 1.8 12 2.5 0.02 6 -65 to 150 150 (1) ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C ( ) Pulse width limited by safe operating area New RDS (on) spec. starting from JULY 98 August 1998 1/9 S...