STP11NM60A

www.DataSheet4U.com N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n STP11NM60A STP11NM60AFP - STB11NM60A-1 VDSS 600 V 600 V 600 V RDS(on) <0.45Ω <0.45Ω <0.45Ω ID 11 A 11 A 11 A 3 1 2 TYPICAL RDS(on) = 0.4Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 TO-220 3 1 2 I2PAK DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 MARKING P11NM60A P11NM60AFP B11NM60A PACKAGE TO-220 TO-220FP I2PAK PACKAGING TUBE TUBE TUBE March 2002 1/11 STP11NM60A/STP11NM60AFP/STB11NM60A-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP11NM60A STB11NM60A-1 Value STP11NM60AFP Unit VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Curre...