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STP12IE90F4
Emitter Switched Bipolar Transistor ESBT® 900 V - 12 A - 0.083 Ω
General features
VCS(ON) 1V
■
IC 12A
RCS(ON) 0.083
W
High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 900V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time TO2...
