STP12N50M2
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package
Datasheet - preliminary data
7$%
72
Features
Order code STP12N50M2
VDS 500 V
RDS(on) max ID 0.38 Ω 10 A
• Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected
Figure 1. Internal schematic diagram , TAB
Applications
• Switching applications
Description
This device is an N-channel Power MO.
N-channel Power MOSFET
STP12N50M2
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package
Datasheet - preliminary data
7$%
72
Features
Order code STP12N50M2
VDS 500 V
RDS(on) max ID 0.38 Ω 10 A
• Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected
Figure 1. Internal schematic diagram , TAB
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
AM15572v1
Order code STP12N50M2
.
Table 1. Device summary
Marking
Package
12N50M2
TO-220
Packaging Tube
June 2014
DocID026516 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/13
www.st.com
Contents
Contents
STP12N50M2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . ..