STP12NB30 STP12NB30FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P
s s s s...
STP12NB30 STP12NB30FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™
MOSFET
PRELIMINARY DATA TYPE STP3NB60 STP12NB30F P
s s s s s
V DSS 300 V 300 V
R DS(on) < 0.40 Ω < 0.40 Ω
ID 12A 6.5 A
TYPICAL RDS(on) = 0.34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1 2 3
1 2 3
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power
MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM ( ) P t ot dv/dt( 1 ) V ISO T stg Tj Parameter Drain-source
Voltage (V GS = 0) Drain- gate
Voltage (R GS = 20 k Ω ) Gate-source
Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery
voltage slope Insulation Withstand
Voltage (DC) Storage T emperature Max. O perating Junction Temperature
o o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value ST P12NB30 ST P12NB30FP 300 300 ± 30 12 7.5 48 125 1 5.5 -65 to 150 150 6.5...