STP12NK30Z

STP12NK30Z N-CHANNEL 300V - 0.36Ω - 9A - TO-220 Zener-Protected SuperMESH™Power MOSFET TYPE STP12NK30Z s s s s s s s VDSS 300 V RDS(on) < 0.4 Ω ID (1) 9A Pw (1) 90 W TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 2 TO-220 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS LIGHTING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s HIGH CURRENT, HIGH SPEED SWITCHING s ORDERING INFORMATION SALES TYPE STP12NK30Z MARKING P12NK30Z PACKAGE TO-220 PACKAGING TUBE December 2002 1/8 STP12NK30Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM (1) PTOT VESD(G-S) dv/dt (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperatu...