STB12NM50T4, STP12NM50, STP12NM50FP
Datasheet
N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power MOSFETs in a D²PAK, TO-220...
STB12NM50T4, STP12NM50, STP12NM50FP
Datasheet
N-channel 500 V, 300 mΩ typ., 12 A MDmesh Power
MOSFETs in a D²PAK, TO-220 and TO-220FP packages
TAB
3 1
D2 PAK
TAB
3 2 1
TO-220FP
TO-220
1 23
D(2, TAB)
Features
Order codes
VDS
STB12NM50T4
STP12NM50
500 V
STP12NM50FP
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
RDS(on) max. 350 mΩ
Applications
Switching applications
ID 12 A
G(1) S(3)
NG1D2TS3
Description
These N-channel Power
MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low onresistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power
MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Product status link STB12NM50T4 STP12NM50 STP12NM50FP
DS1944 - Rev 12 - October 2020 For further information contact your local STMicroelectronics sales office.
www.st.com
STB12NM50T4, STP12NM50, STP12NM50FP
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source
voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current pulsed
PTOT
Total power dissipation at TC = 25 °C
VISO
Insulation withstand
voltage (RMS) from all three leads to external heat sin...