STP130N8F7

STP130N8F7 N-channel 80 V, 5.0 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data TAB TO-220 1 23 Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STP130N8F7 VDS 80 V RDS(on) max. 5.8 mΩ ID 80 A PTOT 205 W  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(3) Order code STP130N8F7 AM01475v1_noZen Table 1: Device summary Marking Package 130N8F7 TO-220 Packing Tube March 2017 DocID027247 Rev 2 This is information on a product in full production. 1/13 www.st.com Contents Contents STP130N8F7 1 Electrical rat...