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STP130NS04ZB

ST Microelectronics

N-channel Power MOSFET

www.DataSheet4U.com STP130NS04ZB STB130NS04ZB - STW130NS04ZB N-CHANNEL CLAMPED - 7 mΩ - 80A TO-220/D²PAK/TO-247 FULLY P...


ST Microelectronics

STP130NS04ZB

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www.DataSheet4U.com STP130NS04ZB STB130NS04ZB - STW130NS04ZB N-CHANNEL CLAMPED - 7 mΩ - 80A TO-220/D²PAK/TO-247 FULLY PROTECTED MESH OVERLAY™ MOSFET Table 1: General Features TYPE STP130NS04ZB STB130NS04ZB STW130NS04ZB s s s s Figure 1: Package RDS(on) < 9 mΩ < 9 mΩ < 9 mΩ ID 80 A 80 A 80 A 3 3 1 2 VDSS CLAMPED CLAMPED CLAMPED TYPICAL RDS(on) = 7 mΩ 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175°C MAXIMUM JUNCTION TEMPERATURE 1 TO-220 D²PAK DESCRIPTION This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also recommended. 3 2 1 TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS s HIGH SWITCHING CURRENT s LINEAR APPLICATIONS Table 2: Order Codes Sales Type STP130NS04ZB STB130NS04ZBT4 STW130NS04ZB Marking P130NS04ZB B130NS04ZB W130NS04ZB Package TO-220 D²PAK TO-247 Packaging TUBE TAPE & REEL TUBE Rev. 2 February 2005 1/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Table 3: Absolute Maximum ratings Symbol VDS VDG VGS ID ID IDG IGS IDM ( ) PTOT VESD(G-S) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current...




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