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STB140N10F4, STF140N10F4 STP140N10F4
N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP STripFET...
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STB140N10F4, STF140N10F4 STP140N10F4
N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP STripFET™ DeepGATE™ Power
MOSFET
Preliminary Data
Features
Type STB140N10F4 STF140N10F4 STP140N10F4
■ ■ ■
VDSS 100 V 100 V 100 V
RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ
ID 140 A 55 A
3
3 1 2
140 A TO-220FP
1
2
TO-220
Exceptional dv/dt capability Extremely low on-resistance RDS(on) 100% avalanche tested
3 1
Application
■
D²PAK
Switching applications
Figure 1.
Internal schematic diagram
Description
This Power
MOSFET is among the latest developments that use an advanced technology (STripFET™ DeepGATE™ technology), which has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in avalanche and commutation mode. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary
Marking 140N10F4 140N10F4 140N10F4 Package D²PAK TO-220FP TO-220 Packaging Tape and reel Tube Tube
Order codes STB140N10F4 STF140N10F4 STP140N10F4
January 2009
Rev 1
1/13
www.st.com 13
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Contents
STB140N10F4, STF140N10F4, STP140N10F4
Contents
1 2 3 4 5 6 Electrical ratings . . . . . ....