STP140N8F7
N-channel 80 V, 3.5 mΩ typ., 90 A STripFET™ F7 Power MOSFET in a TO-220 package
Datasheet - production data
...
STP140N8F7
N-channel 80 V, 3.5 mΩ typ., 90 A STripFET™ F7 Power
MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
Features
Order code STP140N8F7
VDS 80 V
RDS(on) max. 4.3 mΩ
ID 90 A
PTOT 200 W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power
MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Table 1: Device summary Order code Marking Package Packaging
STP140N8F7 140N8F7 TO-220
Tube
AM01475v1_Tab
October 2014
DocID026822 Rev 2
This is information on a product in full production.
1/13
www.st.com
Contents
Contents
STP140N8F7
1 Electrical ratings ...................
