STP165N10F4
N-channel 100 V, 4.4 mΩ, 120 A TO-220 STripFET™ DeepGATE™ Power MOSFET
Features
Order code STP165N10F4
VD...
STP165N10F4
N-channel 100 V, 4.4 mΩ, 120 A TO-220 STripFET™ DeepGATE™ Power
MOSFET
Features
Order code STP165N10F4
VDSS 100 V
RDS(on) max
ID
< 5.5 mΩ 120 A
■ N-channel enhancement mode ■ 100% avalanche rated ■ Low gate charge ■ Very low on-resistance
Application
Switching applications
Description
The STP165N10F4 is an N-channel enhancement mode Power
MOSFET built with STripFET™ DeepGATE™ technology with a new gate structure. The product is tailored to minimize on-resistance.
3 2 1
TO-220
Figure 1. Internal schematic diagram
$
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Table 1. Device summary Order code
STP165N10F4
Marking 165N10F4
3
!-V
Package TO-220
Packaging Tube
November 2010
Doc ID 15781 Rev 2
1/12
www.st.com
12
Contents
Contents
STP165N10F4
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electric...
