STP16NK60Z-S

STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH™ MOSFET TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z s s s s s s VDSS 600 V 600 V 600 V RDS(on) < 0.42 Ω < 0.42 Ω < 0.42 Ω ID 14 A 14 A 14 A Pw 190 W 190 W 190 W 3 1 2 TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 12 TO-220 I2SPAK 3 2 1 TO-247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES ORDER CODE PART NUMBER STP16NK60Z STB16NK60Z-S STW16NK60Z MARKING P16NK60Z B16NK60Z W16NK60Z PACKAGE TO-220 I2SPAK TO-247 PACKAGING TUBE TUBE TUBE March 2004 1/11 STP16NK60Z - STB16NK60Z-S - STW16NK60Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) To...