STP16NM50N

STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP Features www.DataSheet4U.com Type VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω ID 1 3 3 12 STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N 15 A 15 A 15 A (1) D²PAK 2 1 3 I²PAK 15 A 15 A 3 1 2 TO-247 3 1 2 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Figure 1. Internal schematic diagram Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking B16NM50N I16NM50N F16NM50N P16NM50N W16NM50N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube Order codes STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N March 2008 Rev 2 1/18 www.st.com 18 Contents STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . ...