STP17NF25

STP17NF25 Datasheet N-channel 250 V, 140 mΩ typ., 17 A STripFET II Power MOSFET in a TO-220 package Features TAB TO-220 1 23 Order code VDS RDS(on) max. ID STP17NF25 250 V 165 mΩ 17 A Exceptional dv/dt capability 100% avalanche tested Low gate charge D(2, TAB) Applications Switching applications G(1) S(3) Description AM01475v1_noZen This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STP17NF25 Product summary Order code STP17NF25 Marking 17NF25 Package TO-220 Packing Tube DS14385 - Rev 1 - July 2023 For further information contact your local STMicroelectronics sales office. www.st.com STP17NF25 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 17 A, di/dt ≤ 200 A...