STP185N55

www.DataSheet4U.com STB185N55 STP185N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh™ low voltage Power MOSFET TARGET SPECIFICATION General features Type STB185N55 STP185N55 VDSS 55V 55V RDS(on) 3.5mΩ 3.8mΩ ID 120A(1) 120A(1) 3 1 2 1. Value limited by wire bonding ■ ■ 3 1 Ultra low on-resistance 100% avalanche tested TO-220 D2PAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “single feature size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications ■ Switching application – Automotive Order codes Part number STB185N55 STP185N55 Marking B185N55 P185N55 Package D 2PAK Packaging Tape & reel Tube TO-220 August 2006 Rev 3 1/12 www.st.com 12 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. Contents STB185N55 - STP185N55 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . ...