STP18N55M5
Datasheet
N-channel 550 V, 150 mΩ typ., 16 A MDmesh M5 Power MOSFET in a TO-220 package
Features
TAB
TO-22...
STP18N55M5
Datasheet
N-channel 550 V, 150 mΩ typ., 16 A MDmesh M5 Power
MOSFET in a TO-220 package
Features
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS at TJ max.
RDS(on) max.
ID
STP18N55M5
600 V
192 mΩ
16 A
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Applications
Switching applications
G(1)
Description
This device is an N-channel Power
MOSFET based on the MDmesh M5 innovative
S(3)
vertical process technology combined with the well-known PowerMESH horizontal
layout. The resulting product offers extremely low on-resistance, making it particularly
AM01475v1_noZen suitable for applications requiring high power and superior efficiency.
Product status link STP18N55M5
Product summary
Order code
STP18N55M5
Marking
18N55M5
Package
TO-220
Packing
Tube
DS14410 - Rev 1 - August 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STP18N55M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source
voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery
voltage slope
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width is limited by safe operating area. 2. ISD ≤ 16 A, di/dt ≤ 400 A/μs, VDS (peak) <...