STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2
Datasheet
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D...
STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2
Datasheet
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power
MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages
TAB TAB
3 1
D2PAK
TAB
3 2 1
I2PAK
1 23
TO-220
3 2 1
TO-247
D (2 , TAB)
G( 1)
S(3)
AM15572V1
Features
Order codes
VDS @ TJmax RDS(on) max.
STB18N60M2
STI18N60M2 STP18N60M2
650 V
0.280 Ω
STW18N60M2
Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected
ID 13 A
Package D²PAK I²PAK TO-220 TO-247
Application
Switching applications LLC converters, resonant converters
Description
These devices are N-channel Power
MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Product status link STB18N60M2 STI18N60M2 STP18N60M2 STW...
