| Part Number | STP21NM60N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | N-CHANNEL MOSFET |
| Description | ucThis series of devices implements the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical str... |
| Features |
Type
VDSS (@Tjmax)
RDS(on) max
ID
STB21NM60N
)STB21NM60N-1 t(sSTF21NM60N cSTP21NM60N uSTW21NM60N
650 V 650 V 650 V 650 V 650 V
< 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω
17 A 17 A 17 A(1) 17 A 17 A
rod1. Limited by maximum temperature allowed
P ■ 100% avalanche tested te ■ Low input capaci... |
| Datasheet | STP21NM60N pdf datasheet |
| Part Number | STP21NM60ND |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP21NM60ND ·FEATURES ·With TO-220 package ·Low input capacitance and gate charge ·Low ga. |
| Features |
·With TO-220 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT . |
| Datasheet | STP21NM60ND pdf datasheet |
| Part Number | STP21NM60ND |
| Manufacturer | STMicroelectronics |
| Title | N-channel MOSFET |
| Description | 6 These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced $0Y using the second generation of MDmesh™ tech. |
| Features |
Order codes
STB21NM60ND STF21NM60ND STP21NM60ND STW21NM60ND
VDSS @ TJmax
650 V 650 V 650 V 650 V
RDS(on) max
0.22 Ω 0.22 Ω 0.22 Ω 0.22 Ω
ID
17 A 17 A 17 A 17 A
• Intrinsic fast-recovery body diode • Worldwide best RDS(on)*area amongst the fast recovery diode devices • 100% avalanche tested • Lo. |
| Datasheet | STP21NM60ND pdf datasheet |
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