STP315N10F7

STP315N10F7 Automotive-grade N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code STP315N10F7 VDS 100 V RDS(on)max 2.7 mΩ ID 180 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) Features  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STP315N10F7 AM01475v1_Tab Table 1: Device summary Marking Package 315N10F7 TO-220 Packaging Tube August 2016 DocID025348 Rev 4 This is information on a product in full production. ...