STP5N95K3
Datasheet
N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in a TO-220 package
Features
TAB
Order code...
STP5N95K3
Datasheet
N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power
MOSFET in a TO-220 package
Features
TAB
Order code
VDS
RDS(on) max.
ID
STP5N95K3
950 V
3.5 Ω
4A
t(s) TO-220
1 23
roduc D(2, TAB)
100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected
Applications
te P G(1)
Switching applications
sole Description
Ob S(3)
This MDmesh K3 Power
MOSFET is the result of improvements applied to
- AM01476v1_tab STMicroelectronics’ MDmesh technology, combined with a new optimized vertical
) structure. This device boasts an extremely low on-resistance, superior dynamic
t(s performance and high avalanche capability, rendering it suitable for the most
demanding applications.
lete Produc Product status link ObsoSTP5N95K3
Product summary
Order code
STP5N95K3
Marking
5N95K3
Package
TO-220
Packing
Tube
DS14292 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STP5N95K3
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
VGS
Gate-source
voltage
±30
Drain current (continuous) at TC = 25 °C
4
ID
Drain current (continuous) at TC = 100 °C
3
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
t(s) IAR
Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max)
c EAS
Single pulse avalanche energy ...