STP5NA80

( DataSheet : www.DataSheet4U.com ) STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP5NA80 STP5NA80FI s s s s s s s VDSS 800 V 800 V R DS(on) < 2.4 Ω < 2.4 Ω ID 4.7 A 2.8 A TYPICAL RDS(on) = 1.8 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 3 1 2 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP5NA80 STP5NA80FI 800 800 ± 30 o Unit V DS V DGR V GS ID ID I DM ( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o V V V 2.8 1.8 19 45 0.36 2000 A A A W W/ o C V o o 4.7 3 19 125 1  -65 to 150 150 ...