STP60L60F

Gr Pr STP60L60F Ver 1.0 SamHop Microelectronics Corp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 32A R DS(ON) (m Ω) Typ 15 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220F Package. D G D S G STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d b a Limit 60 ±20 T C =25 °C T C =70 °C 32 26.8 95 144 a Units V V A A A mJ W W °C Maximum Power Dissipation TC=25°C TC=70°C 30 21 -55 to 175 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 5 65 °C/W °C/W Details are subject to change without notice. Oct,13,2011 1 www.samhop.com.tw STP60L60F Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=48V , VGS=0V Min 60 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current 1 ±100 uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=16A VDS=20V , ID=16A 2 2.8 15 25 2300 142 108 4 19 V m ohm S pF pF pF DYNAMIC CHARACTER...