STP60NE06-16

STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE STP60NE06-16 STP60NE06-16FP s s s s s s V DSS 60 V 60 V R DS(on) < 0.016 Ω < 0.016 Ω ID 60 A 35 A TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 1 2 3 1 2 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter TO220FP INTERNAL SCHEMATIC DIAGRAM Valu e STP60NE06-16 STP60NE06-16F P 60 60 ± 20 o Unit V DS V DGR V GS ID ID IDM ( ) P t ot Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating F actor o o V V V 35 24 240 40 0.3 2000 A A A W W/ C V V/ns o o o 60 42 240 150 1  6 -65 to 175 175 V ISO dV/dt T stg Tj Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. O perating Junction ...