STP60NE06L-16FP

® STP60NE06L-16 STP60NE06L-16FP N - CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET™ POWER MOSFET TY PE STP60N E06L- 16 STP60N E06L- 16F P s s s s s s V DSS 60 V 60 V R DS (on) <0 .016 Ω <0 .016 Ω ID 60 A 35 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE LOW THRESHOLD DRIVE 1 3 2 1 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P to t V ISO dv /dt Tst g Tj May 2000 Parameter Drain-source Voltage (VGS =0 ) Dr ain- gat e Vol tage (RGS =2 0 k Ω )6 Gate-source Voltage Dr ain Current (cont inuous ) at T c =2 5 o C6 Dr ain Current (cont inuous ) at T c =1 00 oC4 Drain Cur rent (puls ed) Total Dissipation at T c =2 5 oC1 Der ating F actor Ins ulat ion Withstand Volt age (DC) Pea k Dio de Re cover y volt age slope Storage Tem per ature Max . Operating Junc tion Tempe ratur e 0 2 240 50 1  6 -65 to 175 175 ( 1)I SD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,T j ≤ TJMAX Val...