STP6506
Dual P Channel Enhancement Mode MOSFET
-2.8A
DESCRIPTION
The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits where high-side.
MOSFET
STP6506
Dual P Channel Enhancement Mode MOSFET
-2.8A
DESCRIPTION
The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
PIN CONFIGURATION TSOP-6
D1 S1 D2
06YW
FEATURE
◆ -30V/-2.8A, RDS(ON)=105mohm@VGS=-10V ◆ -30V/-2.5A, RDS(ON)=135mohm@VGS=-4.5V ◆ Super high density cell design for extremely
low RDS(ON) ◆ Exceptional an-resistance and maximum DC
current capability ◆ TSOP-6P package design
G1 S2 G2
Y: Year A: Produces Code
p-channel
p-channel
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com
STP6506 2010. V1
STP6506
Dual P Channel Enhancement Mode MOSFET
-2.8A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
ID IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation Operation Junction Temperature
TA=25℃ TA=70℃
PD TJ
Storage Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
T≦10sec Steady .