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STP6506 Datasheet

Part Number STP6506
Manufacturers Stanson Technology
Logo Stanson Technology
Description MOSFET
Datasheet STP6506 DatasheetSTP6506 Datasheet (PDF)

STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits where high-side.

  STP6506   STP6506






MOSFET

STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. PIN CONFIGURATION TSOP-6 D1 S1 D2 06YW FEATURE ◆ -30V/-2.8A, RDS(ON)=105mohm@VGS=-10V ◆ -30V/-2.5A, RDS(ON)=135mohm@VGS=-4.5V ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional an-resistance and maximum DC current capability ◆ TSOP-6P package design G1 S2 G2 Y: Year A: Produces Code p-channel p-channel STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP6506 2010. V1 STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ ID IDM Continuous Source Current (Diode Conduction) IS Power Dissipation Operation Junction Temperature TA=25℃ TA=70℃ PD TJ Storage Temperature Range TSTG Thermal Resistance-Junction to Ambient T≦10sec Steady .


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