STP652F

Gre r Pro STP652F Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 29A R DS(ON) (m Ω) Typ 22 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F package. D G G D S STF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy d b a Limit 60 ±20 T C =25 °C T C =70 °C 29 24 90 110 a Units V V A A A mJ W W °C Maximum Power Dissipation TC=25°C TC=70°C 46 32 -55 to 175 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 3.25 62.5 °C/W °C/W Details are subject to change without notice. Oct,27,2010 1 www.samhop.com.tw STP652F Ver 1.1 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=48V , VGS=0V Min 60 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS DYNAMIC CISS COSS CRSS Drain-Source On-State Resistance Forward Transconductance CHARACTERISTICS C Input Capacitance Output Capacitance Reverse Transfer Capacitance C ...