STP6623

SCRIPTION STP6623 P Channel Enhancement Mode MOSFET -18.0A STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching. PIN CONFIGURATION SOP-8 FEATURE -60V/-10.0A, RDS(ON) = 23mΩ (Typ.) @VGS =-10V -60V/-8.0A, RDS(ON) = 28mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6623 2010. V1 STP6623 P Channel Enhancement Mode MOSFET -18.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VDSS VGSS ID IDM IS PD TJ Storgae Temperature Range Thermal Resistance-Junction to Ambient TSTG RθJA Typical -60 ±20 -18.0 -11.0 -50 -4.3 3.1 2.0 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6623 2010. V1 STP6623 P Cha...