STP6LNC60FP

N-CHANNEL 600V - 1Ω - 5.8A TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP6LNC60 STP6LNC60FP www.DataSheet4U.com s s s s s STP6LNC60 STP6LNC60FP VDSS 600 V 600 V RDS(on) < 1.25 Ω < 1.25 Ω ID 5.8 A 5.8 A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES s TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –65 to 150 (1)ISD ≤5.8A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS , Tj ≤ TJMAX. Value STP6LNC60 600 600 ±30 5.8 3.65 23.2 100 0.8 3 2500 5.8 (*) 3.65 (*) 23.2 (*) 35 0.28 STP6LNC60FP Unit V V V A A A W W/°C V/ns V...