STP6N25

www.DataSheet4U.com STP6N25 STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STP6N25 STP6N25FI s s s s s VDSS 250 V 250 V R DS(on) <1Ω <1Ω ID 6A 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 APPLICATIONS TO-220 ISOWATT220 s HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s MOTOR CONTROL, AUDIO AMPLIFIERS s INDUSTRIAL ACTUATORS s DC-DC & DC-AC CONVERTERS FOR INTERNAL SCHEMATIC DIAGRAM TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT DataSheet4U.com s PARTICULARLY SUITABLE FOR ELECTRONIC FLUORESCENT LAMP BALLASTS DataShe e ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP6N25 V DS V DGR V GS ID ID I DM ( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Value STP6N25FI 250 250 ± 20 6 4 24 70 0.56  -65 to 150 150 4 2.6 24 35 0.28 2000 Unit V V V A A A W W/o C o o C C () Pulse width limited by safe operating area June 1993 1/10 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STP6N25/FI THERMAL DATA TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1.79 62.5 0.5 30...