STF6N60M2, STP6N60M2, STU6N60M2
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP, TO-...
STF6N60M2, STP6N60M2, STU6N60M2
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power
MOSFET in TO-220FP, TO-220 and IPAK packages
Datasheet - production data
TAB
3 2 1
TO-220FP
TAB
IPAK
3
2 1
3 2 1
TO-220
Figure 1. Internal schematic diagram , TAB
Features
Order codes
STF6N60M2 STP6N60M2 STU6N60M2
VDS @ TJmax
RDS(on) max
ID
650 V 1.2 Ω 4.5 A
Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected
Applications
Switching applications
AM15572v1
Description
These devices are N-channel Power
MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power
MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Order codes STF6N60M2 STP6N60M2 STU6N60M2
Table 1. Device summary
Marking
Package
6N60M2
TO-220FP TO-220 IPAK
June 2013
This is information on a product in full production.
DocID024771 Rev 1
Packaging Tube
1/18
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Contents
Contents
STF6N60M2, STP6N60M2, STU6N60M2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . ...