STP6N90K5
N-channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a TO-220 package
Datasheet - production data
TA...
STP6N90K5
N-channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5 Power
MOSFET in a TO-220 package
Datasheet - production data
TAB
TO-220
1 23
Figure 1: Internal schematic diagram
Features
Order code STP6N90K5
VDS 900 V
RDS(on) max. 1.10 Ω
ID 6A
Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected
Applications
Switching applications
Description
This very high
voltage N-channel Power
MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code STP6N90K5
Table 1: Device summary
Marking
Package
6N90K5
TO-220
Packing Tube
November 2016
DocID029946 Rev 1
This is information on a product in full production.
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www.st.com
Contents
Contents
STP6N90K5
1 Electrical ratings....