STP6NB25FP

www.DataSheet4U.com N-CHANNEL 250V - 0.9Ω - 6A TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP6NB25 STP6NB25FP s s s s s STP6NB25 STP6NB25FP VDSS 250 V 250 V RDS(on) < 1.1 Ω < 1.1 Ω ID 6A 3.7 A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. DataSheet4U.com APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM , INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Jun 2000 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature –60 to 150 150 (1)ISD ≤ 6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T...