STP77N6F6
N-channel 60 V, 6.6 mΩ typ., 77 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package
Datasheet — product...
STP77N6F6
N-channel 60 V, 6.6 mΩ typ., 77 A STripFET™ VI DeepGATE™ Power
MOSFET in a TO-220 package
Datasheet — production data
Features
Order code VDS
RDS(on) max
ID PTOT
STP77N6F6 60 V 7.9 mΩ (VGS=10 V) 77 A 80 W
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge
Applications
■ Switching applications
Description
This device is an N-channel Power
MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all packages.
TAB
3 2 1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
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Table 1. Device summary Order code STP77N6F6
Marking 77N6F6
3
!-V
Package TO-220
Packaging Tube
December 2012
This is information on a product in full production.
Doc ID 024067 Rev 1
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Contents
Contents
STP77N6F6
1 Electr...
