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STP7NA60FI Datasheet

Part Number STP7NA60FI
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Datasheet STP7NA60FI DatasheetSTP7NA60FI Datasheet (PDF)

STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 7NA 60 ST P 7NA 60 F I VDSS 600 V 600 V R DS( on) <1Ω <1Ω ID 7.2 A 4.4 A s TYPICAL RDS(on) = 0.92 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout c.

  STP7NA60FI   STP7NA60FI






N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 7NA 60 ST P 7NA 60 F I VDSS 600 V 600 V R DS( on) <1Ω <1Ω ID 7.2 A 4.4 A s TYPICAL RDS(on) = 0.92 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol P ar amete r VD S Drain-source Voltage (VGS = 0) VDG R Drain-gate Voltage (RG S = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM(•) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (•) Pulse width limited by safe operating area November 1996 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Val ue STP7NA60 STP7NA60FI 600 600 ± 30 7.2 4.4 4.6 2.8 29 29 125 45 1 0.36  2000 -65 to 150 150 U.


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