STP7NB40 STP7NB40FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STP7NB40 STP7NB40FP
s s s s s
...
STP7NB40 STP7NB40FP
N - CHANNEL ENHANCEMENT MODE PowerMESH™
MOSFET
PRELIMINARY DATA TYPE STP7NB40 STP7NB40FP
s s s s s
V DSS 400 V 400 V
R DS(on) < 0.9 Ω < 0.9 Ω
ID 7.0 A 4.4 A
TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dV/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1 2
3 1 2
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power
MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM ( ) P tot dv/dt( 1 ) V ISO T stg Tj Parameter Drain-source
Voltage (V GS = 0) Drain- gate
Voltage (R GS = 20 k Ω ) Gate-source
Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery
voltage slope Insulation Withstand
Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
Value STP7NB40 STP7NB40FP 400 400 ± 30 7 4.4 28 100 0.8 4.5 -65 to 1...