STP7NM80

STP7NM80 Datasheet N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh Power MOSFET in a TO-220 package Features TAB Order code VDS RDS(on) max. ID ct(s) TO-220 1 23 STP7NM80 800 V 1.05 Ω 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 6.5 A Produ D(2, TAB) Applications Switching applications solete G(1) t(s) - Ob S(3) Description AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance that is superior to similar products on the market. bsolete Produc Product status link O STP7NM80 Product summary Order code STP7NM80 Marking P7NM80 Package TO-220 Packing Tube DS14327 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office. www.st.com STP7NM80 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value VDS Drain-source voltage 800 VGS Gate-source voltage ±30 Drain current (continuous) at TC = 25 °C 6.5 ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) t(s) PTOT Total power dissipation at TC = 25 °C c Tstg Storage temperature range ...