STP80N340K6
Datasheet
N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package
TAB
TO-220
1 23
...
STP80N340K6
Datasheet
N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power
MOSFET in a TO-220 package
TAB
TO-220
1 23
D(2, TAB)
G(1)
Features
Order code
VDS
RDS(on) max.
ID
STP80N340K6
800 V
340 mΩ
12 A
Worldwide best RDS(on) x area Worldwide best FOM (figure of merit) Ultra low gate charge 100% avalanche tested Zener-protected
Applications
Flyback converter Adapters for tablets, notebook and AIO LED lighting
Description
S(3)
AM01476v1_tab This very high
voltage N-channel Power
MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Product status link STP80N340K6
Product summary
Order code
STP80N340K6
Marking
80N340K6
Package
TO-220
Packing
Tube
DS14083 - Rev 1 - September 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
STP80N340K6
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source
voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery
voltage slope
di/dt(2)
Peak diode recovery current slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
T...