STPR2010CT thru STPR2020CT
Ultra Fast Recovery Diodes
C(TAB)
AC A
A C A
A=Anode, C=Cathode, TAB=Cathode
STPR2010CT S...
STPR2010CT thru STPR2020CT
Ultra Fast Recovery Diodes
C(TAB)
AC A
A C A
A=Anode, C=Cathode, TAB=Cathode
STPR2010CT STPR2020CT
VRRM V
100 200
VRMS V 70
140
VDC V
100 200
Dimensions TO-220AB
Dim.
A B C D E F G H J K M N Q R
Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=95oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD)
Maximum Ratings 20
125
Unit A
A
Maximum Forward
Voltage At VF Pulse Width=300us
2% Duty Cycle
IF=10A IF=10A IF=20A IF=20A
@TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC
1.1 1.0 1.25 1.20
V
IR
Maximum DC Reverse Current At Rated DC Blocking
Voltage
@TJ=25oC @TJ=100oC
5 100
CJ Typical Junction Capacitance Per Element (Note 1) TRR Maximum Reverse Recovery Time (Note 2) ROJC Typical Thermal Resistance (Note 3) TJ, TSTG Operating And Storage Temperature Range
100 35 1.5 -55 to +150
NOTES: 1. Measured At 1.0MHz And Applied Reverse
Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case.
FEATURES
* Glass passivated chip * Superfast switching time for high e...