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STPS2045CR

STMicroelectronics

POWER SCHOTTKY RECTIFIER

STPS2045C A1 K A2 K A2 K A1 TO-220AB K A2 K A1 TO-220FPAB K A2 A1 D²PAK A2 A1 Features  Very small conduction los...



STPS2045CR

STMicroelectronics


Octopart Stock #: O-902124

Findchips Stock #: 902124-F

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Description
STPS2045C A1 K A2 K A2 K A1 TO-220AB K A2 K A1 TO-220FPAB K A2 A1 D²PAK A2 A1 Features  Very small conduction losses  Negligible switching losses  Extremely fast switching  Insulated package: TO-220FPAB  Insulating voltage = 2000 VRMS sine  Avalanche rated  ECOPACK®2 compliant component for D²PAK on demand Power Schottky rectifier Da
More View tasheet - production data Description Dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters. Packaged either in TO-220AB, TO-220FPAB, or D²PAK, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Table 1: Device summary Symbol Value IF(AV) VRRM VF (typ.) Tj (max.) 2 x 10 A 45 V 0.5 V 175 °C October 2016 DocID3506 Rev 10 This is information on a product in full production. 1/15 www.st.com Characteristics STPS2045C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) Forward rms current 30 A Average forward TO-220AB / D²PAK Per diode TC = 155 °C Per device 10 20 IF(AV) current A δ = 0.5, square wave TO-220FPAB TC = 140 °C Per diode 10 TC = 125 °C Per device 20 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A PARM(1) Repetitive peak avalanche power VARM(2) VASM(2) Maximum repetitive peak avalanche voltage Maximum single-pulse peak avalanche voltage Tstg Storage temperature range Tj Maximum operating junction temperature (3) tp = 10 µs, Tj = 125 °C 280 W tp < 10 µs, Tj < 125 °C, 60 V IAR < 7.7 A -65 to +175 °C 175 Notes: (1)For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”. (2)See Figure 9. (3)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Symbol Rth(j-c) Junction to case Rth(c) Coupling Table 3: Thermal parameters Parameter TO-220AB / D²PAK Per diode Total TO-220FPAB Per diode Total TO-220AB / D²PAK TO-220FPAB Max. value 2.2 1.4 4.5 3.5 0.4 2.5 Unit °C/W When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) 2/15 DocID3506 Rev 10 STPS2045C Symbol IR(1) VF(1) Table 4: Static electrical characteristics (per diode) Characteristics Parameter Test conditions Min. Typ. Max. Unit Reverse leakage current Forward voltage drop Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = V






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