STPSC12065-Y

STPSC12065-Y Datasheet Automotive 650 V, 12 A, silicon carbide power Schottky diode A K K K A K TO-220AC K K A NC D²PAK A A NC D²PAK HV Product label Product status link STPSC12065-Y Product summary IF(AV) 12 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V Features AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability PPAP capable Operating Tj from -40 °C to 175 °C VRRM guaranteed from -40 to +175 °C D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) ECOPACK®2 compliant Applications On board charger Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off ...