STPSC40H12C-Y

STPSC40H12C-Y Datasheet 40 A 1200 V power Schottky silicon carbide diode Product status link STPSC40H12C-Y Product summary IF(AV) 2 x 20 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V Product label Features AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Robust high-voltage periphery PPAP capable Operating Tj from -40 °C to 175 °C ECOPACK2 compliant Applications OBC (On Board Battery chargers) PHEV - EV charging stations Resonant LLC topology PFC functions (Power Factor Corrector) Description The SiC diode, available in TO-247, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. DS13623 - Rev 1 - January 2021 For further information contact your local STMicroelectronics sales office. www.st.com STPSC40H12C-Y Characteristics 1 Characteristics Table 1. Absolute rat...