STQ1HN60K3-AP
N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power MOSFET in a TO-92 package
Datasheet − production dat...
STQ1HN60K3-AP
N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power
MOSFET in a TO-92 package
Datasheet − production data
3 2 1
TO-92
Figure 1. Internal schematic diagram
D(2)
Features
Order code
VDS
STQ1HN60K3-AP 600 V
RDS(on) max
8Ω
ID PTOT 0.4 A 3 W
100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery
characteristics Zener-protected
Applications
Switching applications
G(1) S(3)
AM01476v1
Description
This SuperMESH3™ Power
MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Order code STQ1HN60K3-AP
Table 1. Device summary
Marking
Package
1HN60K3
TO-92
Packaging Ammopack
April 2013
This is information on a product in full production.
DocID024427 Rev 1
1/14
www.st.com
14
Contents
Contents
STQ1HN60K3-AP
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
